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| 4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features * Low on-resistance R DS(on) 0.06 , VGS = 10 V, I D = 5 A R DS(on) 0.075 , VGS = 4 V, I D = 5 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S3 S6 S7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK26 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg 2 2 1 Ratings 60 20 10 32 10 28 4 150 -55 to +150 Unit V V A A A W W C C 2 4AK26 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.045 0.056 12 1400 720 220 15 95 300 170 1.05 110 Max -- -- 10 250 2.0 0.06 0.075 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V s I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, dIF/dt = 50 A/s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V*1 ID = 5 A VGS = 4 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A VGS = 10 V RL = 3 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 4AK26 Maximum Channel Dissipation Curve 6 Pch (W) 5 4 3 2 1 Pch (W) Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 20 Channel Dissipation Channel Dissipation 10 0 25 50 75 100 125 150 Ambient Temperature Ta (C) 0 25 50 75 100 125 Case Temperature Tc (C) 150 Typical Output Characteristics 50 10 V 8V 6V Typical Transfer Characteristics 50 75C VDS = 10 V Pulse Test TC= 25C -25C 4.5 V Drain Current ID (A) 4.0 V Pulse Test 3.5 V 40 Drain Current ID (A) 40 30 30 20 3.0 V 20 10 VGS = 2.5 V 10 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 4 4AK26 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test Static Drain to Source on Static Resistance RDS (on) () Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 4 0.2 VGS = 4 V 3 ID = 50 A 0.1 0.05 10 V 2 0.02 0.01 0.005 1 2 50 10 5 20 Drain Current ID (A) 100 1 20 A 10 A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test ID = 20 A 10 A VGS = 4 V 10 A Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 100 50 VDS = 10 V Pulse Test -25C TC = 25C 0.10 0.08 0.06 20 10 5 2 1 0.5 75C 20 A 5 A 0.04 5A 0.02 VGS = 10 V 0 -40 80 0 40 120 Case Temperature TC (C) 160 1.0 2 10 20 5 Drain Current ID (A) 50 5 4AK26 Body to Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) 10,000 3,000 Ciss 1,000 Coss 300 Crss 100 30 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 500 200 100 50 20 10 0.5 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 50 V 80 25 V 10 V 60 VDS 40 20 VDD = 50 V 25 V 10 V VGS 12 16 20 Gate to Source Voltage VGS (V) 1000 500 Switching Time t (ns) Switching Characteristics td (off) tf 200 100 tr 50 20 10 0.5 8 4 ID = 25 A 0 100 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % * * td (on) 1.0 2 5 10 20 Drain Current ID (A) 50 0 20 40 60 80 Gate Charge Qg (nc) 6 4AK26 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) 40 Pulse Test 30 10 V 15 V 20 5V 10 VGS = 0, -5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 7 Unit: mm 31.0 0.3 4.0 0.2 2.7 10.0 0.3 10.5 0.5 1.5 0.2 0.85 0.1 1.4 2.54 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 11 12 Hitachi Code JEDEC EIAJ Weight (reference value) SP-12 -- -- 3.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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